Laboratory of atomic-scale low-dimensional structures

Recent and some earlier publications (please ask for reprints)


A.B. Odobescu, A.A. Maizlakh, N.I. Fedotov, S.V. Zaitsev-Zotov, "Electronic correlation effects and Coulomb gap in the Si(111)-(sqrt 3 x sqrt 3)-Sn surface", arXiv:1612.04989.

N.I.Fedotov, S.V.Zaitsev-Zotov, "Experimental search for one-dimensional edge states at surface steps of the topological insulator Bi32Se3: Distinguishing between effects and artifacts", Physical Review B (2017) arXiv:1609.08911; DOI:10.1103/PhysRevB.95.155403.

S.G. Zybtsev, V.Ya. Pokrovskii, V.F. Nasretdinova, S.V. Zaitsev-Zotov, V.V. Pavlovskiy, A.B. Odobesco, Woei Wu Pai, M.-W. Chu, Y.G. Lin, E. Zupanic, H. J. P. van Midden, S. Sturm, E. Tchernychova, A. Prodan, J. C. Bennett, I. R. Mukhamedshin, O. V. Chernysheva, A. P. Menushenkov, V. B. Loginov, B. A. Loginov, A. N. Titov, and M. Abdel-Hafiez, "NbS3: A unique quasi-one-dimensional conductor with three charge density wave transitions", Physical Review B (2017) arxiv:1606.09542; DOI: 10.1103/PhysRevB.95.035110.


N.I.Fedotov, S.V.Zaitsev-Zotov, "Energy gap in tunneling spectroscopy: effect of the chemical potential shift", JETP Letters (2016) arXiv:1609.08294; DOI:110.1134/S0021364016230028.


A.B. Odobescu, A.A. Mayzlakh, S.V. Zaitsev-Zotov, "Electron correlation effects in transport and tunneling spectroscopy of the Si(111)-7x7 surface", Physical Review B (2015) arXiv:1411.5590; DOI:10.1103/PhysRevB.92.165313.

S.V. Zaitsev-Zotov, V.F. Nasretdinova, V.E. Minakova, "Charge-density waves physics revealed by photoconduction", Physica B: Condensed Matter (2015); arXiv:1410.7002; DOI:10.1016/j.physb.2014.11.064.

V.F. Nasretdinova, E.B. Yakimov, S.V. Zaitsev-Zotov, "Indium doping-induced change in the photoconduction spectra of o-TaS3", Physica B: Condensed Matter (2015); arXiv:1411.0253; DOI:10.1016/j.physb.2014.11.065.

V.E. Minakova, V.F. Nasretdinova and S.V. Zaitsev-Zotov, "Photoconduction in Peierls conductor monoclinic TaS3", Physica B: Condensed Matter (2015); arXiv:1411.0167; DOI:10.1016/j.physb.2014.11.066.


A.Yu. Dmitriev, N.I. Fedotov, V.F. Nasretdinova, S.V. Zaitsev-Zotov, “Effect of surface defects and few-atomic steps on the local density of states of the atomically-clean surface of Bi2Se3 topological insulator”, JETP Letters, vol. 100, issue 6, pp. 398–402 (2014); [Pis'ma ZhETP, vol. 100, issue 6, pp. 442 – 446 (2014)]; DOI:10.1134/S0021364014180039; arXiv:1408.4991.


V.Ya. Pokrovskii, S.G. Zybtsev, M.V. Nikitin, I.G. Gorlova, V.F. Nasretdinova, S.V. Zaitsev-Zotov, "High-frequency, ’quantum’ and electromechanical effects in quasi-one-dimensional charge density wave conductors", Phys. Usp. 56 29–48 (2013); DOI:10.3367/UFNe.0183.201301b.0033.


А.Б. Одобеску, А.А. Рогозин, С.В. Зайцев-Зотов, Температурные зависимости проводимости и туннельной плотности состояний поверхностной реконструкции Si(111)-7x7 в слаболегированных образцах кремния, Журнал Радиоэлектроники:  (электронный журнал) № 9 (2012), http://jre.cplire.ru/jre/sep12/4/text.pdf

A. B. Odobescu and S. V. Zaitsev-Zotov, Energy gap revealed by low-temperature scanning–tunnelling spectroscopy of the Si(111)-7x7 surface in illuminated slightly doped crystals, J. Phys.: Condens. Matter 24 395003 (2012); DOI:10.1088/0953-8984/24/39/395003

S.V. Zaitsev-Zotov, V.E. Minakova, V.F. Nasretdinova, S.G. Zybtsev, Photoconduction in CDW conductors, Physica B 407, 1868–1873 (2012) DOI:10.1016/j.physb.2012.01.051

S.G. Zybtsev, V.Ya. Pokrovskii, V.F. Nasretdinova, S.V. Zaitsev-Zotov, Growth, crystal structure and transport properties of quasi one-dimensional conductors NbS3 , Physica B 407, 1696–1699 (2012); DOI:10.1016/j.physb.2012.01.009

S.G. Zybtsev, V.Ya. Pokrovskii, S.V. Zaitsev-Zotov, ‘‘Quantization’’ of the q-vector in microcrystals of K0.3MoO3 and NbSe3, Physica B 407, 1810–1812 (2012); DOI:10.1016/j.physb.2012.01.036

V. Nasretdinova, S. Zaitsev-Zotov, Photoconduction spectra of quasi-one-dimensional conductor NbS3(I), Physica B 407, 1874–1877 (2012); DOI:10.1016/j.physb.2012.01.052


E. Dizhur, I. Kostyleva, A. Voronovskii, and S. Zaitzev-Zotov, «Non-linear conductivity of NbS3 in pressure induced metal state», Phys. Status Solidi C 8, No. 5, 1695 – 1698 (2011)


A.B. Odobesco, B.A. Loginov, V.B. Loginov, V.F. Nasretdinova, S.V. Zaitsev Zotov, An Ultrahigh Vacuum Device for Measuring the Conductivity of Surface Structures by a Four Probe Method Based on a Closed Cycle Refrigerator, Instruments and Experimental Techniques, 2010, Vol. 53, No. 3, pp. 461–467 (2010) [Pribory i Tekhnika Eksperimenta, 2010, No. 3, pp. 152–158 (2010)] DOI: 10.1134/S0020441210030267

G. Zybtsev, V.Ya. Pokrovskii & S.V. Zaitsev-Zotov, ‘Quantized’ states of the charge-density wave in microcrystals of K0.3MoO3, Nature Communications, Vol. 1 , Art. No. 85 (2010).


S. G. Zybtsev, V. Ya. Pokrovskii, V. F. Nasretdinova, and S. V. Zaitsev-Zotov, «Gigahertz-range synchronization at room temperature and other features of charge-density wave transport in the quasi-one-dimensional conductor NbS3», Applied Physics Letters, 94, 152112-1 - 152113-3, (2009)

V. F. Nasretdinova and S. V. Zaitsev-Zotov, Electric Field Dependent Energy Structure of Quasi-One-Dimensional Conductor o-TaS3, JETP Letters, Vol. 89, No. 10, pp. 514–518 (2009) [Pis’ma v ZhETF, Vol. 89, No. 10, pp. 607–611 (2009)] DOI:10.1134/S0021364009100099, arXiv:0812.4689.

Е.М. Дижур, И.Е. Костылева, А.Н. Вороновский, С.В. Зайцев-Зотов, «Нелинейная проводимостиь NbS3 в металлической фазе высокого давления», Письма в ЖЭТФ, т. 90, вып. 5, 379-381 (2009)

E. Dizhur, M. Il’ina, and S. Zaitzev-Zotov, «Assumed Peierls transition in NbS3 under pressure», Phys. Status Solidi B 246, No. 3, 500 – 503 (2009).


Staresinic, D., Zaitsev-Zotov, S.V., Baklanov, N.I., Biljakovic, K. Freezing of low energy excitations in charge density wave glasses Journal of Chemical Physics, Volume 128, Issue 9, pp. 094501-094501-9 (2008).

V. N. Trofimov, A. N. Chernikov, S. V. Zaitsev-Zotov, I. N. Dyuzhikov, V. M. Shevlyugac, and K. N. Eltsov, An Ultrahigh-Vacuum Nitrogen-Free Helium Cryostat with Small Heat Losses, Instruments and Experimental Techniques, Vol. 50, No. 6, pp. 838–841 (2007) [Pribory i Tekhnika Eksperimenta,2007, No. 6, pp. 128–131 (2007)]

B. A. Loginov, K. N. El’tsov, S. V. Zaitsev-Zotov, A. N. Klimov, and V. M. Shevlyuga A Scanner for an Ultrahigh-Vacuum Low-Temperature Scanning Tunneling Microscope Instruments and Experimental Techniques, Vol. 50, No. 3, pp. 422–423 (2007) [Pribory i Tekhnika Eksperimenta, 2007, No. 3, pp. 148–149].

E. M. Dizhur, M. A. Il’ina, and S. V. Zaitsev-Zotov, Metal–Insulator Transition in Whiskers of the NbS3 Quasi-One-Dimensional Conductor under Pressure, JETP Letters, Vol. 86, No. 2, pp. 132–134.(2007). [Pis’ma v Zhurnal Eksperimental’noi Teoreticheskoi Fiziki, 2007, Vol. 86, No. 2, pp. 141–143].


S. V. Zaitsev-Zotov and V. E. Minakova, Evidence of Collective Charge Transport in the Ohmic Regime of o-TaS3 in the Charge-Density-Wave State by a Photoconduction Study, Phys. Rev. Lett. 97, 266404 (2006).


E. Slot, M. A. Holst, H. S. J. van der Zant, and S. V. Zaitsev-Zotov, One-Dimensional Conduction in Charge-Density-Wave Nanowires, Phys. Rev. Lett. 93, 176602 (2004)

S V Zaitsev-Zotov, Finite-size effects in quasi-one-dimensional conductors with a charge-density wave, Physics-Uspekhi 47 (6) 533-554 (2004); DOI: 10.3367/UFNr.0174.200406a.0585.

S. V. Zaitsev-Zotov, One-Dimensionality Effects in Quasi-One-Dimensional Conductors, JETP Letters, Vol. 80, No. 6 (2004) pp. 445–454 [Pis’ma v ZhETP, Vol. 80, No. 6 (2004) pp. 503–514].

V. Ya. Pokrovskii, A. V. Golovnya, and S. V. Zaitsev-Zotov, Peierls transition as spatially inhomogeneous gap suppression, Phys. Rev. B 70, 113106 (2004).


S.V. Zaitsev-Zotov, Transport properties of TaS3 and NbSe3 crystals of nanometer-scale transverse dimensions, Microelectronic Engineering 69 (2003) 549–554.

S. V. Zaitsev-Zotov, Yu. A. Kumzerov, Yu. A. Firsov, and P. Monceau, Unconventional Magnetoresistance in Long InSb Nanowires, JETP Letters, Vol. 77, No. 3, 2003, pp. 135–139; [Pis’ma v ZhETF, Vol. 77, No. 3, (2003), pp. 162–166]; DOI:10.1134/1.1567775 arXiv:cond-mat/0212633.


S. V. Zaitsev-Zotov, V. Ya. Pokrovski, and P. Monceau, Transition to 1D Conduction with Decreasing Thickness of the Crystals of TaS3 and NbSe3 Quasi-1D Conductors, JETP Letters, Vol. 73, No. 1, 2001, pp. 25–27 [Pis’ma v ZhETF, Vol. 73, No. 1, 2001, pp. 29–32.]

H. S. J. van der Zant, E. Slot, S. V. Zaitsev-Zotov, and S. N. Artemenko, Negative Resistance and Local Charge-Density-Wave Dynamics, Phys. Rev. Lett. 87, 126401 (2001).


S. N. Artemenko, S. V. Zaitsev-Zotov, V. E. Minakova, and P. Monceau, Convective Terms and Transversely Driven Charge-Density Waves, Phys. Rev. Lett. 84, 5184 (2000).

V. Ya. Pokrovskii and S. V. Zaitsev-Zotov, Contribution of spontaneous phase slippage to linear and nonlinear conduction near the Peierls transition in thin samples of TaS3, Phys. Rev. B 61, 13261 (2000).

S V Zaitsev-Zotov, Yu A Kumzerov, Yu A Firsov and P Monceau, Luttinger-liquid-like transport in long InSb nanowires J. Phys.: Condens. Matter 12 (2000) L303–L309.


S.V. Zaitsev-Zotov, G. Remenyi, and P. Monceau, Zero-temperature limits of nonlinear conduction of the quasi-one-dimensional conductor TaS3 with charge-density waves, Phys. Rev. B 56, 6388 (1997).

V. Ya. Pokrovskii, S. V. Zaitsev-Zotov, and P. Monceau, Threshold nonlinear conduction of thin samples of o-TaS3 above the Peierls transition temperature, Phys. Rev. B 55, R13377 (1997)

S. V. Zaitsev-Zotov, G. Remenyi, and P. Monceau, Strong-Pinning Effects in Low-Temperature Creep: Charge-Density Waves in TaS3, Phys. Rev. Lett. 78, 1098 (1997).


SN Artemenko, VY Pokrovskii, SV Zaitsev-Zotov, Electron-hole balance and semiconductor properties of quasi-one-dimensional charge-density-wave conductors, JETP, 83 (9) 590 (1996).

I.B. Altfeder and S.V. Zaitsev-Zotov, Hexagonal phase with mosaic structure of charge-density waves observed by scanning tunneling microscopy at the surface of a NbSe3 crystal, Phys. Rev. B 54, 7694 (1996)

T. L. Adelman, M. C. de Lind van Wijngaarden, S. V. Zaitsev-Zotov, D. DiCarlo, and R. E. Thorne, Spatially resolved studies of charge-density-wave dynamics and phase slip in NbSe3, Phys. Rev. B 53, 1833 (1996)


T. L. Adelman, M. C. de Lind van Wijngaarden, S. V. Zaitsev-Zotov, D. DiCarlo, and R. E. Thorne, Phase slip and the spatiotemporal response of charge-density waves in NbSe3, Phys. Rev. B 52, R5483 (1995)

T. L. Adelman, S. V. Zaitsev-Zotov, and R. E. Thorne, Field-Effect Modulation of Charge-Density-Wave Transport in NbSe3 and TaS3, Phys. Rev. Lett. 74, 5264 (1995)


Comment on ‘‘Metastable length states of a random system: TaS3’’ V. Ya. Pokrovskii and S. V. Zaitsev-Zotov, Phys. Rev. B 50, 15442 (1994)

S. V. Zaitsev-Zotov, Zaitsev-Zotov replies, Phys. Rev. Lett. 72, 587 (1994)


S. V. Zaitsev-Zotov, Classical-to-quantum crossover in charge-density wave creep at low temperatures, Phys. Rev. Lett. 71, 605 (1993)


SV Zaitsev-Zotov, VY Pokrovskii, JC Gill, Mesoscopic behaviour of the threshold voltage in ultra-small specimens of o-TaS , Journal de Physique I 2 (1), 111-120 (1992)


Stepankin V. N., Protasov E. A., Kuznetsov A. V., Zaitsev-Zotov S. V., Josephson and single-particle tunneling in superconducting bicrystals BaPb1-xBixO3, JETP Letters, v. 41, issue 1, pp.27-29 (1984).

SV Zaitsev-Zotov, AN Martynyuk, EA Protasov, Superconductivity of BaPb1-xBixO3 films prepared by laser evaporation method, Soviet Physics - Solid State; v. 25(1) p. 100 (1983)



Н.И. Федотов, С.В. Зайцев-Зотов, «Сканирующая туннельная микроскопия и спектроскопия поверхности топологического изолятора Bi2Se3», Нанофизика и наноэлектроника, Труды XX Международного симпозиума, Нижний Новгород, 14-18 марта 2016 г., Нижний Новгород, Изд-во Новгородского университета, 2016, Том 1, стр. 334 (приглашенный доклад).


А.Б. Одобеско, А.А. Майзлах С.В. Зайцев-Зотов, «Кулоновская блокада при туннельной спектроскопии высокоомных поверхностей Si(111)-7x7», Труды XIX Международного симпозиума «Нанофизика и наноэлектроника», Том 1, стр. 258 (2015).

А.Ю. Дмитриев, Н.И. Федотов, В.Ф. Насретдинова, С.В. Зайцев-Зотов, «Влияние дефектов и атомных ступеней на локальную плотность состояний атомно-чистой поверхности топологического изолятора Bi2Se3» Труды XIX Международного симпозиума «Нанофизика и наноэлектроника», Том 1, стр. 260 (2015).

В.Е. Минакова, А.Н. Талденков, С.В. Зайцев-Зотов. ''Влияние одноосного растяжения пайерлсовского проводника о-TaS3 на его низкотемпературную проводимость и фотопроводимость''. XIII Конференция «Сильно коррелированные