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Kiselev D.A., Starukhina S.S., Ilina T.S., Kuharskaya N.F., Naryshkina V.G., Sivov A.A., Chucheva G.V. Effect of dopant on piezoelectric and dielectric properties of thin films Bi3.25La0.75Ti3−xAxO12 (A — Mn, Zr, Nb). Physics of the Solid State , 2022 . ISSN 1063-7834
Belorusov D. A., Goldman E.I., Naryshkina V.G., Chucheva G.V. Silicon Ultrathin Oxide (4.2 nm)–Polysilicon Structures Resistant to Field Damages. Semiconductor , 2021 , 55 (1). С. 21-24. ISSN 1063-7826
Goldman E.I., Naryshkina V.G., Chucheva G.V. Electrophysical Properties Investigation of Ba0.8Sr0.2TiO3 Ferroelectric Films in Paraelectric State. Physics of the Solid State , 2020 , 62 (8). С. 1380-1385. ISSN 1063-7834
Afanasiev M.S., Egorov V.K., Egorov E.V., Kuharskaya N. F., Nabiev A.E., Naryshkina V.G. The Total-Reflection X-Ray Fluorescence Yield Formed by a Waveguide Resonator under Conditions of Ion Beam Excitation. Instruments and Experimental Techniques , 2019 . ISSN 0020-4412
Goldman E.I., Naryshkina V.G., Chucheva G.V. On the Influence of Ionic Polarization of Transistor Si-Structures on the Conductivity of p-Type Channels. Journal of Communications Technology and Electronics , 2019 , 64 (10). С. 1034-1037. ISSN 1064-2269
Goldman E. I., Nabiev A., Naryshkina V.G., Chucheva G.V. On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect. Semiconductors , 2019 , 53 (1). С. 85-88. ISSN 1063-7826
Afanasiev M.S., Kiselev D.A., Levashov S.A., Luzanov V.A., Nabiyev A.A., Naryshkina V.G., Sivov A.A., Chucheva G.V. The Influence of the Substrate Material on the Structure and Electrophysical Properties of BaxSr1–xTiO3 Thin Films. Physics of the Solid State , 2018 , 60 (5). С. 954-957.
Afanasiev M.S., Kiselev D.A., Levashov S.A., Luzanov V.A., Nabiev A., Naryshkina V.G., Sivov A.A., Chucheva G.V. The Influence of the Substrate Material on the Structure and Electrophysical Properties of BaxSr1–xTiO3 Thin Films. Physics of the Solid State , 2018 , 60 (5). С. 954-957. ISSN 1063-7834
Goldman E.I., Levashov S.A., Naryshkina V.G., Chucheva G.V. Generation of Surface Electron States with a Silicon–Ultrathin-Oxide Interface under the Field-induced Damage of Metal–Oxide–Semiconductor Structures. Semiconductors , 2017 , 51 (9). С. 1136-1140. ISSN ISSN 1063-7826
Chucheva G.V., Goldman E.I., Nabiev A.E., Naryshkina V.G. The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact. In: International Conference on Micro- and Nano-Electronics 2018,, 1-5 октября2018, Zvenigorod, Russian Federation , 2019 SPIE CCC code: 0277-786X/19/$18 , 1102215-1-1102215-5.
Chucheva G.V., Goldman E.I., Nabiev A., Naryshkina V.G. The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact. In: Международная конференция "Микро- и наноэлектроника - 2018" (ICMNE-2018) с расширенной сессией "Квантовая информатика", 1-5 октября 2018г., г. Звенигород, Россия , МАКС Пресс , р. 157.
