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Goldman E. I., Nabiev A., Naryshkina V.G., Chucheva G.V. On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect. Semiconductors , 2019 , 53 (1). С. 85-88. ISSN 1063-7826
Afanasiev M.S., Nabiev A., Chucheva G.V., Guseinov D. Acquiring MIS Structures Based on Bа0.8Sr0.2TiО3 Ferroelectric Films and their Properties. Key Engineering Materials , 2018 , 781. С. 20-24. ISSN 1662-9795
Afanasiev M.S., Kiselev D.A., Levashov S.A., Luzanov V.A., Nabiev A., Naryshkina V.G., Sivov A.A., Chucheva G.V. The Influence of the Substrate Material on the Structure and Electrophysical Properties of BaxSr1–xTiO3 Thin Films. Physics of the Solid State , 2018 , 60 (5). С. 954-957. ISSN 1063-7834
Chucheva G.V., Goldman E.I., Nabiev A., Naryshkina V.G. The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact. In: Международная конференция "Микро- и наноэлектроника - 2018" (ICMNE-2018) с расширенной сессией "Квантовая информатика", 1-5 октября 2018г., г. Звенигород, Россия , МАКС Пресс , р. 157.
