 | На уровень вверх |
Lomov A. A., Zakharov D. M., Tarasov M. A., Chekushkin A. M., Tatarintsev A. A., Vasiliev A. L. Al Islands on Si(111): Growth Temperature, Morphology, and Strain. Russian Microelectronics , 2024 , 53 (4). С. 339-348. ISSN 1063-7397
Lomov A. A., Zakharov D. M., Tarasov M. A., Chekushkin A. M., Tatarintsev A. A., Kiselev D. A., Ilyina T. S., Seleznev A. E. Influence of the Homobuffer Layer on the Morphology, Microstructure, and Hardness of Al/Si(111) Films. Technical Physics , 2024 , 69 (6). С. 1636-1645. ISSN 1063-7842
Lomov A. A., Zakharov D. M., Tarasov M. A., Chekushkin A. M., Tatarintsev A. A., Kiselev D. A., Ilyina T. S., Seleznev A. E. Influence of the homobuffer layer on the morphology, microstructure, and hardness of Al/Si(111) films. Technical Physics , 2023 , 68 (7). С. 833-842. ISSN 1063-7842
Strelkov M. V., Chekushkin A. M., Lomov A. A., Kraevskii S. V., Fominskii M. Yu., Tarasov M. A. Structure of Aluminum Films for the Creation of Tunnel Junctions. Journal of Communications Technology and Electronics , 2023 , 68 (10). С. 1214-1218. ISSN 1064-2269
Tarasov M.A., Lomov A. A., Chekushkin A. M., Gunbina A.A., Fominsky M. Yu., Kraevsky S. V., Kozulin R. K., Shadrin A. V. Ultimate parameters of SIS junctions in theory and technological possibilities to achieve them. Physics of the Solid State , 2023 , 65 (7). С. 1091-1097. ISSN 1063-7834
