Объекты, где автором является "Hodakov А.М."

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Статья

Sergeev V. A.,, Hodakov А.М. Dynamic thermoelectric model of a heterojunction bipolar transistor taking into account the voltage drop on the emitter metallization tracks. RENSIT: Radioelectronics. Nanosystems. Information Technologies, 2023, 15(2)109-116e. , 2023 .

Smirnov V. I., Hodakov А.М., Gavrikov А.А. Modeling of thermoelectrical processes in a power MOSFET modules. RENSIT: Radioelectronics. Nanosystems. Information Technologies, 2023, 15(2)117-124e. , 2023 .

Sergeev V. A.,, Hodakov А.М. Thermal model of a heterojunction bipolar transistor taking into account the voltage drop on the emitter fingers of metallization. 2022 Moscow Workshop on Electronic and Networking Technologies (MWENT), 2022, pp. 1-4 , 2022 .

Sergeev V. A.,, Hodakov А.М. Thermoelectric model of a heterojunction bipolar transistor taking into account the voltage drop on the current-carrying metallization. RENSIT: Radioelectronics. Nanosystems. Information technologies, 2022, 14(2):103-110 , 2022 .

Sergeev V. A.,, Hodakov А.М., Kulikov A. A. A. A. Modeling of thermoelectric processes in a power MOSFET transistor with a structural defect. Journal of Physics: Conference Series. 2021. V. 1745.012041. , 2021 .

Frolov I.V., Hodakov А.М., Sergeev V. A.,, Radaev O. A. The model of degradation of an InGaN/GaN LED during current tests taking into account the inhomogeneous distribution of the defects density in the heterostructure. ФизикА.СПб, Journal of Physics: Conference Series. , 2021 .

Sergeev V. A.,, Hodakov А.М., Frolov I.V. The model of degradation of InGaN/GaN LED during current tests taking into account the inhomogeneous distribution of temperature and current density in the heterostructure. RENSIT.- 2020.-т.12(3).-с. 329-334 , 2020 .

Sergeev V. A.,, Hodakov А.М. Thermoelectric Model of InGaN/GaN LEDs Taking into Account Influence of Heterostructure Substrate. Russian Microelectronics , 2018 , 47 (7). С. 1-4. ISSN 1063-7397

Sergeev V. A.,, Hodakov А.М. Dynamic Thermoelectric Model of a Light-Emitting Structure with a Current Spreading Layer. Semiconductors , 2016 .

Sergeev V. A.,, Hodakov А.М. Nonlinear thermal model of a heterojunction-based light-emitting diode. Semiconductors , 2012 (5). С. 673-677.

Этот список был создан Mon Apr 29 17:45:32 2024 GMT-3.