Объекты, где автором является "Goldman E. I."

Статья

Goldman E. I., Kuharskaya N. F., Levashov S.A., Chucheva G.V. Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements. Semiconductors , 2019 , 53 (1). С. 42-45. ISSN 1063-7826

Goldman E. I., Nabiev A., Naryshkina V.G., Chucheva G.V. On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect. Semiconductors , 2019 , 53 (1). С. 85-88. ISSN 1063-7826