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Belorusov D. A., Goldman E.I., Chucheva G.V. Franz–Keldysh Effect in Silicon–Ultrafine (3.7 nm) Oxide– Polysilicon Structures. Journal of Communications Technology and Electronics , 2023 . ISSN 1064-2269
Belorusov D. A., Goldman E.I., Chucheva G.V. Ultrathin (3.7 nm) Silicon Oxide Layers with a Low Concentration of Broken Bonds on the Contact with a Semiconductor. Journal of Communications Technology and Electronics , 2023 . ISSN 1064-2269
Belorusov D. A., Goldman E.I., Chucheva G.V. A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer BaxSr1−xTiO3. Physics of the Solid State , 2022 . ISSN 1063-7834
Belorusov D. A., Goldman E.I., Chucheva G.V. The Effect Of A Strong Static Electric Field And Heating On Characteristics Of The High-Frequency Impedance Of Metal--Ferroelectric--Semiconductor Structures. Physics of the Solid State , 2022 . ISSN 1063-7834
Goldman E.I., Chucheva G.V., Shusharin I.A. Insulating potential shape created by ultrathin silicon oxide layers. Semiconductors , 2022 . ISSN 1063-7826
Goldman E.I., Chucheva G.V., Belorusov D. A. On the form of high-frequency voltage-capacitance characteristics of metal-insulator-semiconductor structures with a ferroelectric insulating layer BaxSr1-хTiO3. Ceramics International , 2021 , 47 (15). С. 21248-21252. ISSN 0272-8842
Belorusov D. A., Goldman E.I., Naryshkina V.G., Chucheva G.V. Silicon Ultrathin Oxide (4.2 nm)–Polysilicon Structures Resistant to Field Damages. Semiconductor , 2021 , 55 (1). С. 21-24. ISSN 1063-7826
Goldman E.I., Naryshkina V.G., Chucheva G.V. Electrophysical Properties Investigation of Ba0.8Sr0.2TiO3 Ferroelectric Films in Paraelectric State. Physics of the Solid State , 2020 , 62 (8). С. 1380-1385. ISSN 1063-7834
Goldman E.I., Chucheva G.V., Afanasiev M.S., Kiselev D.A. Changes in the structural and electrophysical properties of Ba0.8Sr0.2TiO3 films with decreasing thickness. Chaos, Solitons & Fractals , 2020 , 141. р. 110315. ISSN 0960-0779
Afanasiev M. S., Goldman E.I., Chucheva G.V., Nabiev A.E., Huseinov J. I., Aliev A. M. Conductivity of Metal–Dielectric–Semiconductor Structures Based on Ferroelectric Films. Physics of the Solid State , 2020 , 62 (1). С. 164-167. ISSN 1063-7834
Goldman E.I., Levashov S.A., Chucheva G.V. Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures. Semiconductor , 2019 , 53 (4). С. 465-468. ISSN 1063-7826
Goldman E.I., Naryshkina V.G., Chucheva G.V. On the Influence of Ionic Polarization of Transistor Si-Structures on the Conductivity of p-Type Channels. Journal of Communications Technology and Electronics , 2019 , 64 (10). С. 1034-1037. ISSN 1064-2269
Goldman E.I., Levashov S.A., Naryshkina V.G., Chucheva G.V. Generation of Surface Electron States with a Silicon–Ultrathin-Oxide Interface under the Field-induced Damage of Metal–Oxide–Semiconductor Structures. Semiconductors , 2017 , 51 (9). С. 1136-1140. ISSN ISSN 1063-7826
Belorusov D. A., Goldman E.I., Chucheva G.V. Reasons for the weak manifestation of the field effect in metal-Ba1-хSrхTiO3-Si structures. In: 14-ая Межд.конф. “Микро - и наноэлектроника – 2021” (ICMNE-2021), 4-8 октября, Звенигород, Московская область, Россия , р. 90.
Goldman E.I., Shusharin I.A., Chucheva G.V. The shape of the relief of the insulating potential, created by ultrathin layers of the oxide. In: 14-ая Межд.конф. “Микро - и наноэлектроника – 2021” (ICMNE-2021), 4-8 октября, Звенигород, Московская область, Россия , р. 164.
Chucheva G.V., Goldman E.I., Gulyaev Yu.V. Features of the field damage of ultra-thin insulating layers of the silicon oxide. In: The International Conference on Micro- and Nano-Electronics 2018, 1-5 октября2018, 2018, Zvenigorod, Russian Federation , SPIEDigitalLibrary.org/conference-proceedings-of-spie , С. 1102216-1.
Chucheva G.V., Goldman E.I., Nabiev A.E., Naryshkina V.G. The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact. In: International Conference on Micro- and Nano-Electronics 2018,, 1-5 октября2018, Zvenigorod, Russian Federation , 2019 SPIE CCC code: 0277-786X/19/$18 , 1102215-1-1102215-5.
Chucheva G.V., Goldman E.I., Gulyaev Yu.V. Features of the field damage of ultra-thin insulating layers of the silicon oxide. In: Международная конференция "Микро- и наноэлектроника - 2018" (ICMNE-2018) с расширенной сессией "Квантовая информатика", 1-5 октября 2018г., г. Звенигород, Россия , МАКС Пресс , р. 158.
Chucheva G.V., Goldman E.I., Nabiev A., Naryshkina V.G. The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact. In: Международная конференция "Микро- и наноэлектроника - 2018" (ICMNE-2018) с расширенной сессией "Квантовая информатика", 1-5 октября 2018г., г. Звенигород, Россия , МАКС Пресс , р. 157.
