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Odobescu A. B., Maizlakh A. A., Fedotov N. I., Zaitsev-Zotov S. V. Electronic correlation effects and Coulomb gap in the Si(111)- (3×3) -Sn surface. Physical Review B , 2017 , 95 (19). ISSN 2469-9950
Fedotov N. I., Zaitsev-Zotov S.V. Experimental search for one-dimensional edge states at surface steps of the topological insulator Bi2Se3: Distinguishing between effects and artifacts. Physical Review B , 2017 . ISSN 1098-0121
Fedotov N. I., Zaitsev-Zotov S. V. Energy gap in tunneling spectroscopy: effect of the chemical potential shift. JETP Letters , 2016 . С. 1-6. ISSN 0021-3640
Dmitriev A. Yu., Fedotov N. I., Nasretdinova V. F., Zaitsev-Zotov S. V. Effect of surface defects and few-atomic steps on the local density of states of the atomically-clean surface of Bi2Se3 topological insulator. JETP Letters , 2014 , 100 (6). С. 398-402. ISSN 0021-3640
Dmitriev A. Y., Fedotov N. I., Nasretdiniva V. F., Zaitsev-Zotov S. V. SCANNING TUNNELING SPECTROSCOPY OF QUINTUPLE-LAYER STEPS ON THE SURFACE OF Bi2Se3TOPOLOGICAL INSULATOR. In: International Conference Nanomeeting: Physics, Chemistry and Applications of Nanostructures, 26-29 май 2015, Минск, Беларусь , World Scientific , С. 140-143.
