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Belorusov D. A., Goldman E.I., Chucheva G.V. Franz–Keldysh Effect in Silicon–Ultrafine (3.7 nm) Oxide– Polysilicon Structures. Journal of Communications Technology and Electronics , 2023 . ISSN 1064-2269
Afanasiev M.S., Belorusov D. A., Kiselev D.A., Chucheva G.V. Influence of the upper electrode material on the electrophysical properties of MDM structures based on ferroelectric films. Physics of the Solid State , 2023 . ISSN 1063-7834
Afanasiev M.S., Belorusov D. A., Kiselev D.A., Luzanov V.A., Chucheva G.V. Formation and study of metal-insulator-semiconductor structures based on hafnium oxide films. Physics of the Solid State , 2023 . ISSN 1063-7834
Belorusov D. A., Goldman E.I., Chucheva G.V. Ultrathin (3.7 nm) Silicon Oxide Layers with a Low Concentration of Broken Bonds on the Contact with a Semiconductor. Journal of Communications Technology and Electronics , 2023 . ISSN 1064-2269
Belorusov D. A., Goldman E.I., Chucheva G.V. A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer BaxSr1−xTiO3. Physics of the Solid State , 2022 . ISSN 1063-7834
Kiselev D.A., Starukhina S.S., Ilina T.S., Kuharskaya N.F., Naryshkina V.G., Sivov A.A., Chucheva G.V. Effect of dopant on piezoelectric and dielectric properties of thin films Bi3.25La0.75Ti3−xAxO12 (A — Mn, Zr, Nb). Physics of the Solid State , 2022 . ISSN 1063-7834
Belorusov D. A., Goldman E.I., Chucheva G.V. The Effect Of A Strong Static Electric Field And Heating On Characteristics Of The High-Frequency Impedance Of Metal--Ferroelectric--Semiconductor Structures. Physics of the Solid State , 2022 . ISSN 1063-7834
Goldman E.I., Chucheva G.V., Shusharin I.A. Insulating potential shape created by ultrathin silicon oxide layers. Semiconductors , 2022 . ISSN 1063-7826
Afanasiev M.S., Egorov E.V., Egorov V.K., Chucheva G.V. Elemental Analysis of Materials by Methods of Ion-Beam Diagnostics. Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques , 2021 , 15 (4). С. 712-716. ISSN 1027-4510
Goldman E.I., Chucheva G.V., Belorusov D. A. On the form of high-frequency voltage-capacitance characteristics of metal-insulator-semiconductor structures with a ferroelectric insulating layer BaxSr1-хTiO3. Ceramics International , 2021 , 47 (15). С. 21248-21252. ISSN 0272-8842
Belorusov D. A., Goldman E.I., Naryshkina V.G., Chucheva G.V. Silicon Ultrathin Oxide (4.2 nm)–Polysilicon Structures Resistant to Field Damages. Semiconductor , 2021 , 55 (1). С. 21-24. ISSN 1063-7826
Goldman E.I., Naryshkina V.G., Chucheva G.V. Electrophysical Properties Investigation of Ba0.8Sr0.2TiO3 Ferroelectric Films in Paraelectric State. Physics of the Solid State , 2020 , 62 (8). С. 1380-1385. ISSN 1063-7834
Goldman E.I., Chucheva G.V., Afanasiev M.S., Kiselev D.A. Changes in the structural and electrophysical properties of Ba0.8Sr0.2TiO3 films with decreasing thickness. Chaos, Solitons & Fractals , 2020 , 141. р. 110315. ISSN 0960-0779
Afanasiev M. S., Goldman E.I., Chucheva G.V., Nabiev A.E., Huseinov J. I., Aliev A. M. Conductivity of Metal–Dielectric–Semiconductor Structures Based on Ferroelectric Films. Physics of the Solid State , 2020 , 62 (1). С. 164-167. ISSN 1063-7834
Afanas’ev M. S., Kiselev D.A., Levashov S.A., Sivov A.A., Chucheva G.V. Creation and Investigation of Metal—Dielectric–Semiconductor Structures Based on Ferroelectric Films. Physics of the Solid State, , 2020 , 62 (3). С. 480-484. ISSN 1063-7834
Goldman E. I., Kuharskaya N. F., Levashov S.A., Chucheva G.V. Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements. Semiconductors , 2019 , 53 (1). С. 42-45. ISSN 1063-7826
Goldman E.I., Levashov S.A., Chucheva G.V. Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures. Semiconductor , 2019 , 53 (4). С. 465-468. ISSN 1063-7826
Afanasiev M.S,, Kiselev D.A., Levashov S.A., Sivov A.A., Chucheva G.V. The Effect of Synthesis Temperature on the Microstructure and Electrophysical Properties of BST 80/20 Films. Physics of the Solid State. , 2019 , 61 (10). С. 1910-1914. ISSN 1063-7834,
Goldman E.I., Naryshkina V.G., Chucheva G.V. On the Influence of Ionic Polarization of Transistor Si-Structures on the Conductivity of p-Type Channels. Journal of Communications Technology and Electronics , 2019 , 64 (10). С. 1034-1037. ISSN 1064-2269
Goldman E. I., Nabiev A., Naryshkina V.G., Chucheva G.V. On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect. Semiconductors , 2019 , 53 (1). С. 85-88. ISSN 1063-7826
Afanasiev M.S., Kiselev D.A., Levashov S.A., Luzanov V.A., Nabiyev A.A., Naryshkina V.G., Sivov A.A., Chucheva G.V. The Influence of the Substrate Material on the Structure and Electrophysical Properties of BaxSr1–xTiO3 Thin Films. Physics of the Solid State , 2018 , 60 (5). С. 954-957.
Afanasiev M.S., Nabiev A., Chucheva G.V., Guseinov D. Acquiring MIS Structures Based on Bа0.8Sr0.2TiО3 Ferroelectric Films and their Properties. Key Engineering Materials , 2018 , 781. С. 20-24. ISSN 1662-9795
Afanasiev M.S., Kiselev D.A., Levashov S.A., Luzanov V.A., Nabiev A., Naryshkina V.G., Sivov A.A., Chucheva G.V. The Influence of the Substrate Material on the Structure and Electrophysical Properties of BaxSr1–xTiO3 Thin Films. Physics of the Solid State , 2018 , 60 (5). С. 954-957. ISSN 1063-7834
Goldman E.I., Levashov S.A., Naryshkina V.G., Chucheva G.V. Generation of Surface Electron States with a Silicon–Ultrathin-Oxide Interface under the Field-induced Damage of Metal–Oxide–Semiconductor Structures. Semiconductors , 2017 , 51 (9). С. 1136-1140. ISSN ISSN 1063-7826
Kiselev D.A., Afanasiev M.S., Levashov S.A., Sivov A.A., Chucheva G.V. Thickness dependence of electrical and piezoelectric properties of ferroelectric Ba0.8Sr0.2TiO3 thin films. Thin Solid Films , 2016 , 619. С. 214-219. ISSN 0040-6090
Kiselev D.A., Afanasiev M.S., Levashov S.A., Kiselev A.M., Chucheva G.V. Thickness-dependent Electrical and Piezoelectric Properties of Lead-Free Ferroelectric Ba0.8Sr0.2TiO3 Thin Films. Journal of Nano- and Electronic Physics , 2016 , 8 (4). 03027-1. ISSN 2077-6772
Belorusov D. A., Goldman E.I., Chucheva G.V. Reasons for the weak manifestation of the field effect in metal-Ba1-хSrхTiO3-Si structures. In: 14-ая Межд.конф. “Микро - и наноэлектроника – 2021” (ICMNE-2021), 4-8 октября, Звенигород, Московская область, Россия , р. 90.
Goldman E.I., Shusharin I.A., Chucheva G.V. The shape of the relief of the insulating potential, created by ultrathin layers of the oxide. In: 14-ая Межд.конф. “Микро - и наноэлектроника – 2021” (ICMNE-2021), 4-8 октября, Звенигород, Московская область, Россия , р. 164.
Afanasiev M.S., Chucheva G.V., Kiselev D.A. Electric-field-induced domain switching and pinning state in lead-free ferroelectric BST 80/20 film. In: The International Conference on Micro- and Nano-Electronics 2018, 1-5 октября2018, 2018, Zvenigorod, Russian Federation , SPIEDigitalLibrary.org/conference-proceedings-of-spie , 110221-C1.
Chucheva G.V., Goldman E.I., Gulyaev Yu.V. Features of the field damage of ultra-thin insulating layers of the silicon oxide. In: The International Conference on Micro- and Nano-Electronics 2018, 1-5 октября2018, 2018, Zvenigorod, Russian Federation , SPIEDigitalLibrary.org/conference-proceedings-of-spie , С. 1102216-1.
Chucheva G.V., Goldman E.I., Nabiev A.E., Naryshkina V.G. The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact. In: International Conference on Micro- and Nano-Electronics 2018,, 1-5 октября2018, Zvenigorod, Russian Federation , 2019 SPIE CCC code: 0277-786X/19/$18 , 1102215-1-1102215-5.
Chucheva G.V., Goldman E.I., Gulyaev Yu.V. Features of the field damage of ultra-thin insulating layers of the silicon oxide. In: Международная конференция "Микро- и наноэлектроника - 2018" (ICMNE-2018) с расширенной сессией "Квантовая информатика", 1-5 октября 2018г., г. Звенигород, Россия , МАКС Пресс , р. 158.
Afanasiev M.S., Chucheva G.V., Kiselev D.A. Nanoscale domain growth dynamics of lead-free ferroelectric BST thin films. In: Международная конференция "Микро- и наноэлектроника - 2018" (ICMNE-2018) с расширенной сессией "Квантовая информатика", 1-5 октября 2018г., г. Звенигород, Россия , МАКС Пресс , р. 164.
Afanasiev M.S., Chucheva G.V., Kiselev D.A., Levashov S.A., Sivov A.A. Preparation and ferroelectric properties of BaxSr1-xTiO3 thin film by RF magnetron sputtering. In: 14th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity And Young scientists school on the spectroscopic studies of critical dynamics at structural phase transitions, 14-18 мая 2018г., г. Санкт-Петербург, Россия , р. 118.
Afanasiev M.S., Chucheva G.V., Kiselev D.A., Levashov S.A., Sivov A.A. Synthesis and characterization of multifunctional BST thin films. In: European Conference on Applications of Polar Dielectrics (ECAPD-2018), 25 - 28 июня 2018г., МИРЭА, г. Москва, Россия , р. 105.
Afanasiev M.S., Chucheva G.V., Kiselev D.A., Levashov S.A., Sivov A.A. Synthesis and ferroelectric properties of multifunctional BST thin films. In: Кластер конференций 2018. Х Международная научная конференция «Кинетика и механизм кристаллизации. Кристаллизация и материалы нового поколения», 1-6 июля 2018г., г. Суздаль, Россия , АО «Ивановский издательский дом» , С. 414-415.
Chucheva G.V., Goldman E.I., Nabiev A., Naryshkina V.G. The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact. In: Международная конференция "Микро- и наноэлектроника - 2018" (ICMNE-2018) с расширенной сессией "Квантовая информатика", 1-5 октября 2018г., г. Звенигород, Россия , МАКС Пресс , р. 157.
Kiselev D.A., Afanasiev M.S., Levashov S.A., Sivov A.A., Chucheva G.V. Piezoelectric and electrical properties of ferroelectric Ba0.8Sr0.2TiO3 films with different thickness. In: MATERIAIS 2017, XVIII Congresso da Sociedade Portuguesa dos Materiais, VIII International Symposium on Materials, 9-12 April, 2017., University of Aveiro, Aveiro, Portuga , р. 371.
Kiselev D.A., Afanasiev M.S., Chucheva G.V., Levashov S.A. Voltage-induced Domain Growth Kinetics in Ferroelectric BST 80/20 Thin Films by Piezoresponse Force Microscopy. In: 1st International Symposium on Physics of Data Storage, 17-19 December, Amiens, France , Université de Picardie Jules Verne , р. 23.
