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Sharath S. U., Kurian J., Komissinskiy P., Hildebrandt E., Bertaud T., Walczyk C., Calka P., Schroeder T., Alff L. Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories. Applied Physics Letters , 2014 , 105 (7). 073505. ISSN 0003-6951