Объекты, где автором является "Belorusov D. A."

Статья

Belorusov D. A., Goldman E.I., Chucheva G.V. Franz–Keldysh Effect in Silicon–Ultrafine (3.7 nm) Oxide– Polysilicon Structures. Journal of Communications Technology and Electronics , 2023 . ISSN 1064-2269

Afanasiev M.S., Belorusov D. A., Kiselev D.A., Chucheva G.V. Influence of the upper electrode material on the electrophysical properties of MDM structures based on ferroelectric films. Physics of the Solid State , 2023 . ISSN 1063-7834

Afanasiev M.S., Belorusov D. A., Kiselev D.A., Luzanov V.A., Chucheva G.V. Formation and study of metal-insulator-semiconductor structures based on hafnium oxide films. Physics of the Solid State , 2023 . ISSN 1063-7834

Belorusov D. A., Goldman E.I., Chucheva G.V. Ultrathin (3.7 nm) Silicon Oxide Layers with a Low Concentration of Broken Bonds on the Contact with a Semiconductor. Journal of Communications Technology and Electronics , 2023 . ISSN 1064-2269

Belorusov D. A., Goldman E.I., Chucheva G.V. A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer BaxSr1−xTiO3. Physics of the Solid State , 2022 . ISSN 1063-7834

Belorusov D. A., Goldman E.I., Chucheva G.V. The Effect Of A Strong Static Electric Field And Heating On Characteristics Of The High-Frequency Impedance Of Metal--Ferroelectric--Semiconductor Structures. Physics of the Solid State , 2022 . ISSN 1063-7834

Goldman E.I., Chucheva G.V., Belorusov D. A. On the form of high-frequency voltage-capacitance characteristics of metal-insulator-semiconductor structures with a ferroelectric insulating layer BaxSr1-хTiO3. Ceramics International , 2021 , 47 (15). С. 21248-21252. ISSN 0272-8842

Belorusov D. A., Goldman E.I., Naryshkina V.G., Chucheva G.V. Silicon Ultrathin Oxide (4.2 nm)–Polysilicon Structures Resistant to Field Damages. Semiconductor , 2021 , 55 (1). С. 21-24. ISSN 1063-7826

Afanasiev M. S., Belorusov D. A., Kiselev D. A.,, Sivov A. A. Dependence of the Electrophysical Characteristics of Metal–Ferroelectric–Semiconductor Structures on the Field-Electrode Material. Semiconductors , 2020 , 54 (11). С. 1225-1229. ISSN 1063-7826

Доклад на конференции или семинаре

Belorusov D. A., Goldman E.I., Chucheva G.V. Reasons for the weak manifestation of the field effect in metal-Ba1-хSrхTiO3-Si structures. In: 14-ая Межд.конф. “Микро - и наноэлектроника – 2021” (ICMNE-2021), 4-8 октября, Звенигород, Московская область, Россия , р. 90.