Butylkin V.S., Fisher P.S., Kraftmakher G. A., Kazantsev Yu.N., Kalenov D.S., Mal’tsev V. P., Parkhomenko M.P. Exciton Contribution to the Photoinduced Giga- and Terahertz Permittivity of Semiconductors. Journal of Communications Technology and Electronics , 2022 , 67 (12). 1436 -1442.
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A unified approach based on the application of the exciton density matrix is used to study photoinduced permittivity ε of semiconductors in the spectral interval combining gigahertz (GHz) and terahertz (THz) frequency ranges. A significant difference in the behavior of ε in the GHz and THz ranges is revealed. It is shown that an increase in power Pλ of optical irradiation leads to a decrease in Reε at frequencies ω > Δωex (THz range, Drude-like behavior) and an increase at ω < Δωex (GHz range, non-Drude-like behavior) (Δωex is the frequency interval of transitions involving the most populated exciton levels). The growth of Imε with increasing Pλ reaches maximum at the center of interval Δωex and weakens as ω moves away from Δωex. Specific features at ω < Δωex are studied using measurements of ImεGHz(Pλ) and ReεGHz(Pλ) under fiber-optic irradiation (Pλ = 0–370 mW and λ = 0.97 µm) of Si samples in a waveguide resonator (f = ω/2π = 4.7 GHz) and measurements of the dynamics of transmittance T(Pλ) in free space (f = 8–36 GHz). It is shown that quantities ReεGHz and ImεGHz increase with increasing Pλ while the transmittance decreases and approaches saturation at Pλ > 200 mW. For the same power Pλ, the transmittance increases with decreasing frequency.
| Тип объекта: | Статья |
|---|---|
| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | Бутылкин В.С., Фишер П.С., Крафтмахер Г.А., Казанцев Ю.Н., Каленов Д.С., Мальцев В.П., Пархоменко М.П. |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 137 лаб. проблем дифракции |
| URI: | http://cplire.ru:8080/id/eprint/9770 |
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