Chucheva G.V., Goldman E.I., Nabiev A.E., Naryshkina V.G. The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact. In: International Conference on Micro- and Nano-Electronics 2018,, 1-5 октября2018, Zvenigorod, Russian Federation , 2019 SPIE CCC code: 0277-786X/19/$18 , 1102215-1-1102215-5.
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Аннотация
depolarization of samples in the range of values of the induction of the transverse magnetic field of 0 – 5 T at temperatures from 100 K to 200 K were carried out. After the ionic polarization at 420 K under the action of a strong 1013 cm-2 electric field in the oxide at least 6· ions flowed. The previously observed increase of the conductivity in the source-drain circuit after the polarization of insulating layers is up to 10 times explained by the formation of a new D– electrical transfer path through the surface impurity band, associated with delocalized states, that are generated by neutralized ions located in the insulating layer at the interface with a semiconductor.
| Тип объекта: | Доклад на конференции или семинаре (Статья) |
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| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | Чучева Г.В., Гольдман Ею=.И., Набиев А.Е., Нарышкина В.Г. |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 251 лаб. исследования физических явлений на поверхности и границах раздела твердых тел |
| URI: | http://cplire.ru:8080/id/eprint/7831 |
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