Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films

Xu Hui, Liu Jian-Jun, Ye Hai-Tao, Coathup D J, Khomich A.V., Hu Xiao-Jun Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films. Chinese Physics B , 2018 , 27 (9). 096104.

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Аннотация

We investigate the structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond (UNCD) films. Impedance spectroscopy measurements show that the impedance of diamond grains is relatively stable, while that of grain boundaries (GBs) (R b) significantly increases after the C⁺ implantation, and decreases with the increase in the annealing temperature (T a) from 650 °C to 1000 °C. This implies that the C⁺ implantation has a more significant impact on the conductivity of GBs. Conductive atomic force microscopy demonstrates that the number of conductive sites increases in GB regions at T a above 900 °C, owing to the formation of a nanographitic phase confirmed by high-resolution transmission electronic microscopy. Visible-light Raman spectra show that resistive trans-polyacetylene oligomers desorb from GBs at T a above 900 °C, which leads to lower R b of samples annealed at 900 and 1000 °C. With the increase in T a to 1000 °C, diamond grains become smaller with longer GBs modified by a more ordered nanographitic phase, supplying more conductive sites and leading to a lower R b.

Тип объекта:	Статья
Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!:	Хомич
Подразделения (можно выбрать несколько, удерживая Ctrl):	218 лаб. химических методов технологии и анализа
URI:	http://cplire.ru:8080/id/eprint/6060

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