Averin S.V., Kuznetsov P.I., Zhitov V.A., Zakharov L.Yu., Kotov V.M. Structural, electrical and optical characteristics of type-II ZnSe/ZnTe/GaAs superlattice and MSM-photodetector on their base. In: 1st International Symposium on Quantum Science and Technology, 24-26 June 2018, Aberdeen, United Kingdom
|
Текст
Aberdeen June 2018.pdf Загрузить (97kB) | Предварительный просмотр |
Аннотация
Atomic force microscopy, photoluminescence, Raman and energy dispersive X-ray spectroscopy, photoresponse investigations, in-situ reflectometry and I-V characterization were used to investigate structural, optical and electrical properties of type-II ZnSe/ZnTe/GaAs heterostructure and MSMdiode on their base. For the first time we present the results of experimental investigations of metalsemiconductor- metal (MSM) photodetector on the base of type-II ZnSe/ZnTe superlattice. For the MSM-diode with width and distance between interdigital fingers 2.8 μm and total area of photosensitive region 100 × 100 μm2, the dark current density at room temperature is 10-8 A/W. The MSM-detector has high sensitivity. At the wavelength of 620 nm detector response signal corresponds to a current sensitivity S=0.19 A/W and external quantum efficiency EQE=38%. Photoresponse of the MSM-detector shows two peaks of response located at 620 nm and 870 nm. Multicolor photodetectors are desirable for a variety of application including defense, imaging, environmental monitoring, communication and spectroscopy. Key words: metal-semiconductor-metal (MSM) diode, type-II superlattice, heterostructure, dark current, spectral response, infrared detectors.
| Тип объекта: | Доклад на конференции или семинаре (Доклад) |
|---|---|
| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | Аверин С.В., Кузнецов П.И., Житов В.А., Захаров Л.Ю., Котов В.М. |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 218 лаб. химических методов технологии и анализа |
| URI: | http://cplire.ru:8080/id/eprint/5791 |
 |
Изменить объект |
