Gan’shina Elena, Golik Leonard, Kun’kova Zoya, Bykov Igor, Novikov Andrey, Rukovishnikov Alexander, Yuan Ye, Zykov Georgy, Böttger Roman, Zhou Shengqiang Transversal Kerr effect of In1−xMnxAs layers prepared by ion implantation followed by pulsed laser annealing. Japanese Journal of Applied Physics , 2016 , 55 (07MF02). С. 1-5.
Полный текст не доступен из этого репозитория.Аннотация
In1−x Mnx As(x = 6.9%) layers prepared by ion implantation and subsequent pulsed laser annealing have been studied using the magnetooptical transversal Kerr effect (TKE) and spectral ellipsometry. Ellipsometry data reveal the good crystal quality of the layers. The samples show ferromagnetic behaviour below 77 K. Near the absorption edge of the parent InAs semiconductor, large TKE values are observed. In the energy regions of the transitions in the Γ and L critical points of the InAs Brillouin zone, there are several clearly defined structures in the low-temperature TKE spectra. We have calculated the spectral dependences of the diagonal and nondiagonal components of the permittivity tensor (PT), as well as the spectrum of magnetic circular dichroism (MCD) for our samples. A number of extrema in the obtained MCD and PT spectra are close to the energies of transitions in the critical points of the parent semiconductor band structure, which confirms the intrinsic ferromagnetism of the Mn-doped InAs layers.
| Тип объекта: | Статья |
|---|---|
| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | Ганьшина Елена, Голик Леонард, Кунькова Зоя, Быков Игорь, Новиков Андрей, Руковишников Александр, Юань Е, Зыков Георгий, Бёттгер Роман, Чжоу Шенцян. |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 197 лаб. функциональной электроники |
| URI: | http://cplire.ru:8080/id/eprint/5240 |
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