Gundareva I., Divin Y. Optimization of electrical and structural parameters of YBa2Cu3O7-x thin-film bicrystal Josephson junctions with chemical and thermal treatments of substrates. J. Phys. Conf. Series , 2014 , 507. 042014.
Полный текст не доступен из этого репозитория.Аннотация
The [100]-tilt high-Tc Josephson junctions are characterized by high characteristic voltages IcRn but their current range is limited by low critical currents Icf of the thin-film electrodes with tilted c-axes. The impact of chemical and thermal treatments of NdGaO3 substrates on morphology and IV curves of the YBa2Cu3O7−x thin films and the bicrystal thin-film junctions have been studied. It was found that IV curves of the films above a critical current Icf are described by a power-law dependence V = V0(I/Icf – 1)n, where Icf, V0 and n are dependent on the c-axis tilt of the film and treatment of the substrate. Critical current densities jc(78K) up to 1.4*10^7 A/cm2 have been reached in 1.7°-tilt YBa2Cu3O7−x films perpendicular to the tilt. Bicrystal junctions have been fabricated with optimized YBa2Cu3O7−x thin films, and RSJ-like IV-curves in the current ranges from Ic up to 5 Ic with IcRn (78K)-values of 1 mV have been achieved.
Тип объекта: | Статья |
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Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | Гундарева, Дивин |
Подразделения (можно выбрать несколько, удерживая Ctrl): | 183 лаб. фотоэлектронных явлений |
URI: | http://cplire.ru:8080/id/eprint/5104 |
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