Tugushev V. V., Kulatov E. T., Golant K. M. Features of the electronic spectrum and optical absorption of ultrathin Bi2Se3 films. JETP Letters , 2017 , 106 (7). С. 422-428. ISSN 0021-3640
Полный текст не доступен из этого репозитория.Аннотация
The electronic spectra and relative permittivity of ultrathin (1–3 QL) films of Bi2Se3 topological insulator have been calculated by the density functional theory. The calculated spectra exhibit a characteristic feature: the range of 0.0–0.9 eV below the Fermi level contains two doubly degenerate valence bands (“U-bands”),which are geometrically congruent to low-lying spectral branches in the conduction band. It has been shown that the saturation of optical absorption can result in a significant rearrangement of the electronic structure and properties in the near infrared spectral range in the considered film. In particular, the semiconductor (in the absence of interaction with light) type of conductivity of the film can be changed to the metallic type of conductivity strongly nonlinear in the intensity of light.
| Тип объекта: | Статья |
|---|---|
| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | В.В.Тугушев, Э.Т.Кулатов, К.М.Голант |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 195 лаб. волоконно-оптических технологий |
| URI: | http://cplire.ru:8080/id/eprint/4295 |
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