Shu G., Dai B., Ralchenko V.G., Khomich A.A., Ashkinazi E.E., Bolshakov A.P., Bokova-Sirosh S.N., Zhao J., Liu K., Han J., Zhu J. Epitaxial growth of mosaic diamond: Mapping of stress and defects in crystal junction with a confocal Raman spectroscopy. Journal of Crystal Growth , 2017 , 463. С. 19-26.
Полный текст не доступен из этого репозитория.Аннотация
We studied defects and stress distributions in mosaic epitaxial diamond film using a confocal Raman spectroscopy, with a special attention to the junction area between the crystals. The mosaics was grown by microwave plasma CVD on closely arranged (1 0 0)-oriented HPHT type Ib substrates. The width of stress affected and defect enriched region around the junction show a tendency of extending with the film thickness, from ≈40 μm on the film-substrate interface to ≈250 μm in the layer 500 μm above the substrate, as found from the mosaics analysis in cross-section. The stress field around the junction demonstrates a complex pattern, with mixed domains of tensile and compressive stress, with maximum value of σ ≈ 0.6 GPa. A similar non-uniform pattern was observed for defect distribution as well. No sign of amorphous sp2 carbon in the junction zone was revealed.
| Тип объекта: | Статья |
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| Подразделения (можно выбрать несколько, удерживая Ctrl): | 218 лаб. химических методов технологии и анализа |
| URI: | http://cplire.ru:8080/id/eprint/3418 |
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