Kiselev D.A., Afanasiev M.S., Chucheva G.V., Levashov S.A. Voltage-induced Domain Growth Kinetics in Ferroelectric BST 80/20 Thin Films by Piezoresponse Force Microscopy. In: 1st International Symposium on Physics of Data Storage, 17-19 December, Amiens, France , Université de Picardie Jules Verne , р. 23.
Полный текст не доступен из этого репозитория.Аннотация
Previous and today’s dynamic random access memories (DRAMs) have been advanced by mainly focusing on how to make memory cells small to realize high density DRAMs. The most critical challenges in gigabit density DRAMs are yield loss due to large die size and small feature size, standby current failure caused by large chip size and small data retention times owing to reduced charge packet in the memory cell. In the recent years thin film perovskite materials with high dielectric constant such as PZT, SrTiO 3 and (Ba,Sr)TiO 3 (BST) have been investigated as dielectric materials for future DRAMs [1]. In this work, we report a voltage-induced domain growth kinetics in ferroelectric BST 80/20 films (thickness 150 nm) fabricated by RF magnetron sputtering measured via piezoresponse force microscopy (PFM) [2,3]. The surface of the sample shows small grains which diameter ranges from 50 nm to 75 nm and roughness is less than 5 nm. Using the PFM mode to detect the out-of-plane polarization, the domain sizes were measured as a function of the applied writing voltage and the pulse time. As example Figure 1 show the result the local polarization effect via PFM. For the investigation of written domains on as-grown surface of the BST film the negative voltage pulses were applied to fixed locations within this area, thus we have an array of 23 stable domains created by applying voltage pulses of fixed height (V tip =-20 V ÷ -60 V with step 10V) and various durations ranging from 1 to 100 s. The dynamics of domain growth is analyzed experimentally taking into account the strong inhomogeneity of the external electric field in the film.
| Тип объекта: | Доклад на конференции или семинаре (Доклад) |
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| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | Киселев Д.А.,Афанасьев М.С., Чучева Г.В., Левашов С.А. |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 251 лаб. исследования физических явлений на поверхности и границах раздела твердых тел |
| URI: | http://cplire.ru:8080/id/eprint/1694 |
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