Franz–Keldysh Effect in Silicon–Ultrafine (3.7 nm) Oxide– Polysilicon Structures

Belorusov D. A., Goldman E.I., Chucheva G.V. Franz–Keldysh Effect in Silicon–Ultrafine (3.7 nm) Oxide– Polysilicon Structures. Journal of Communications Technology and Electronics , 2023 . ISSN 1064-2269

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Аннотация

Manifestation of the Franz–Keldysh effect was found under indirect daylight illumination of Al‒n+-Si:P–SiO2–(100) n-Si with ultrafine (3.7 nm) oxide. It is shown that the use of illumination even at low field voltages (up to 3 V) leads to an increase in the tunneling current through the oxide compared to the current in darkness by three orders of magnitude. A model is constructed for the influence of radiation on the process of electron tunneling through an ultrathin insulating layer. First, as a result of the Franz–Keldysh effect, a radiation quantum is captured by an electron and a given charge carrier tunnels through the barrier at a higher level compared to darkness. After a charge carrier enters a semiconductor, its energy is sufficient for several acts of electron–hole pair production during the impact ionization of silicon.

Тип объекта:	Статья
Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!:	Белорусов Д.А., Гольдман Е.И., Чучева Г.В.
Подразделения (можно выбрать несколько, удерживая Ctrl):	250 лаб. сегнетоэлектрических материалов и устройств 251 лаб. исследования физических явлений на поверхности и границах раздела твердых тел
URI:	http://cplire.ru:8080/id/eprint/9906

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