Kudrin A.V., Lesnikov V.P., Danilov Yu.A., Dorokhin M.V., Vikhrova O.V., Pavlov D.A., Usov Yu.V., Antonov I.N., Kriukov R.N., Zubkov S.Yu., Nikolichev D.E., Konakov A.A., Dudin Yu.A., Kuznetsov Yu.M., Temiryazeva M.P., Sobolev N.A. Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration. Journal of Magnetism and Magnetic Materials , 2019 , 485. С. 236-243. ISSN 03048853
Полный текст не доступен из этого репозитория.Аннотация
The influence of He+ ion irradiation on magnetotransport properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the p-type has been found. The ion fluence at which the conversion occurs depends on the Fe concentration in the InSb matrix. Magnetotransport properties of the two-phase (In,Fe) Sb layer are strongly affected by ferromagnetic Fe inclusions. An influence of the number of electrically active radiation defects on the magnetic properties of the single-phase In0.75Fe0.25Sb DMS has been found. At the same time, the results show that the magnetic properties of the In0.75Fe0.25Sb DMS are quite resistant to significant changes of the charge carrier concentration and the Fermi level position. The results confirm a weak interrelation between the ferromagnetism and the charge carrier concentration in (In,Fe)Sb that is fundamentally different from Mn doped III-V DMS.
| Тип объекта: | Статья |
|---|---|
| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | Кудрин А.В., Лесников В.П., Данилов Ю.А.,Дорохин М.В., Вихрова О.В., Павлов Д.А., Усов Ю.В., Антонов И.Н., Крюков Р.Н., Зубков С.Ю., Николичев Д.Е., Конаков А.А., Дудин Ю.А., Кузнецов Ю.М., Темирязева М.П., Соболев Н.А. |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 196 лаб. спин-волновых процессов в миллиметровом и субмиллиметровом диапазонах длин волн |
| URI: | http://cplire.ru:8080/id/eprint/9669 |
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