Goldman E.I., Chucheva G.V., Shusharin I.A. Insulating potential shape created by ultrathin silicon oxide layers. Semiconductors , 2022 . ISSN 1063-7826
Это последняя версия данного объекта.
|
Текст
53065.pdf Загрузить (249kB) | Предварительный просмотр |
Аннотация
A previously developed method for reconstructing the insulating potential pattern created by an ultrathin silicon oxide layer from the field dependences of the tunneling current has been modernized. Trapezoidal model potential parameters, that provide the dependence of the current-to-voltage logarithm derivative as close as possible to the experimental one, have been calculated. The approach to starting successive iterations of the potential has been changed in such a way that the functions calculated using the model shape are used rather than zeroing the first turning point coordinates in zero-order approximation. The modernized algorithm has been applied to the experimental field current dependences in n+-Si-SiO2-n-Si structures with an oxide thickness of 3.7 nm, that have a pronounced asymmetry of the tunneling current-voltage characteristics with respect to the external voltage polarity. The effective potential barrier reconstructed from the experimental data is always significantly thinner than the insulating layer, with its maximum shifted towards the contact with the polycrystalline material, and the effective mass of the tunneling electron is several times greater than the typical for thick silicon oxide. Keywords: degenerate polysilicon-silicon oxide-silicon, ultrathin oxide, tunneling current-voltage characteristics, potential pattern.
| Тип объекта: | Статья |
|---|---|
| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | Гольдман Е.И., Чучева Г.В., Шушарин И.А. |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 251 лаб. исследования физических явлений на поверхности и границах раздела твердых тел |
| URI: | http://cplire.ru:8080/id/eprint/9494 |
Доступные версии этого объекта
-
Insulating potential shape created by ultrathin silicon oxide layers. (deposited 20 Окт 2023 18:53)
- Insulating potential shape created by ultrathin silicon oxide layers. (deposited 30 Окт 2023 09:38) [В настоящее время Отображен]
 |
Изменить объект |
