Averin S.V., Kotov V.M. High spectral selectivity metal-semiconductor-metal photodetector. Optical and Quantum Electronics. Optical and Quantum Electronics , 2023 .
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Текст
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Аннотация
The results of experimental study of the metal-semiconductor-metal (MSM) photodiode based on ZnCdSe/ZnSSe/GaAs heterobarrier structure are presented. MSM-diode with 2.8 μm Ni-Au interdigitated Schottky barrier contacts, gaps between them of 3 μm, and total detector area of 100 × 100 μm2 have been fabricated and investigated. At a wavelength of 460 nm MSM-diode provides a high spectral selectivity with FWHM of spectral response 4.3 nm, high current sensitivity of 2.27 A/W and low dark current of 200 pA at 30 V bias. The spectral response of the MSM-detector was characterized under various bias conditions. A reduced Schottky barrier height model was adopted to explain the gain mechanism of the MSM-detector under illumination.
| Тип объекта: | Статья |
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| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | С.В. Аверин, В.М. Котов |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 257 лаб. быстропротекающих оптических явлений в твердотельных структурах |
| URI: | http://cplire.ru:8080/id/eprint/8730 |
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