Belorusov D. A., Goldman E.I., Chucheva G.V.
Ultrathin (3.7 nm) Silicon Oxide Layers with a Low Concentration of Broken Bonds on the Contact with a Semiconductor.
Journal of Communications Technology and Electronics
, 2023
.
ISSN 1064-2269
Аннотация
Results of studies of ultrathin silicon oxide (37 Å)–polysilicon structures as prospects of substrates for objects with ferroelectric insulating layers are presented. It turned out that in structures with SiO2 obtained by high-temperature oxidation, there are low leakage currents associated with tunneling conduction, and the concentration of localized electronic states is three orders of magnitude lower than in objects with native oxide. These circumstances open prospects of creating ferroelectric FeRAM non-volatile memory cells operating on such silicon oxide.
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Ultrathin (3.7 nm) Silicon Oxide Layers with a Low Concentration of Broken Bonds on the Contact with a Semiconductor. (deposited 20 Окт 2023 18:53)
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