Gindikin Yasha, Rozhansky Igor, Sablikov Vladimir A. Electron pairs bound by the spin–orbit interaction in 2D gated Rashba materials with two-band spectrum. Physica E: Low-dimensional Systems and Nanostructures , 2023 , 146. р. 115551. ISSN 13869477
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Текст
Physica E, 146, 115551 (2023) Gindikin,Rozhanskii,Sablikov-Electron pairs bound by the SOI in 2D gated Rashba materials with two-band spectrum.pdf Загрузить (597kB) | Предварительный просмотр |
Аннотация
We show that the bound electron pairs (BEPs) emerge in two-dimensional gated Rashba materials owing to the interplay of the pair spin–orbit interaction, produced by the Coulomb fields of interacting electrons, and the peculiarities of the band structure giving rise to a negative reduced mass of the interacting electrons. Our consideration is based on the four-band Bernevig–Hughes–Zhang model with the Rashba spin–orbit interaction created by the charges on the gate. The binding energy of the BEP varies with the gate voltage in a wide range across the entire width of the two-particle energy gap. Although the spin–orbit interaction destroys the spin quantization, the BEPs have a magnetic moment, which is created mainly by the orbital motion of the electrons and tuned by the gate voltage.
| Тип объекта: | Статья |
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| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | Гиндикин Я.В. Рожанский И. Сабликов В.А. |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 199 лаб. теоретических проблем микроэлектроники |
| URI: | http://cplire.ru:8080/id/eprint/8253 |
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