Presnov Denis /D.E, Bozhjiev Ivan/I.V.., Miakonkikh Аndrey/A.V., Simakin Sergei/S.G., Trifonov Artem/A.S, Krupenin Vladimir/V.A. Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator. Journal of Applied Physics , 2018 , 123 (5). ISSN 00218979
Полный текст не доступен из этого репозитория.Аннотация
Аннотация: We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (∼100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1–0.2 e/√Hz from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.
| Тип объекта: | Статья |
|---|---|
| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | Преснов Д.Е.,Божев И.В.,Мяконьких А.В., Симакин С.Г., Трифонов А.С., Крупенин В.А. |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 193 лаб. физических свойств нанокомпозитных материалов для информационных технологий |
| URI: | http://cplire.ru:8080/id/eprint/6546 |
 |
Изменить объект |
