Experimental study of a SINIS detector response time at 350 GHz signal frequency

Lemzyakov S., Tarasov M., Mahashabde S., Yusupov R., Kuzmin L., Edelman V. Experimental study of a SINIS detector response time at 350 GHz signal frequency. Journal of Physics: Conference Series , 2018 , 969. 012081. ISSN 1742-6588

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Аннотация

Response time constant of a SINIS bolometer integrated in an annular ring antenna was measured at a bath temperature of 100 mK. Samples comprising superconducting aluminium electrodes and normal-metal Al/Fe strip connected to electrodes via tunnel junctions were fabricated on oxidized Si substrate using shadow evaporation. The bolometer was illuminated by a fast black-body radiation source through a band-pass filter centered at 350 GHz with a passband of 7 GHz. Radiation source is a thin NiCr film on sapphire substrate. For rectangular 10100 μs current pulse the radiation front edge was rather sharp due to low thermal capacitance of NiCr film and low thermal conductivity of substrate at temperatures in the range 1-4 K. The rise time of the response was ~1-10 μs. This time presumably is limited by technical reasons: high dynamic resistance of series array of bolometers and capacitance of a long twisted pair wiring from SINIS bolometer to a room-temperature amplifier.

Тип объекта:	Статья
Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!:	Тарасов М.А., Юсупов Р.А.
Подразделения (можно выбрать несколько, удерживая Ctrl):	234 лаб. сверхпроводниковых устройств для приема и обработки информации
URI:	http://cplire.ru:8080/id/eprint/5174

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