Selectively-sensitive-metal-semiconductor-metal photodetectors based on AlGaN/AlN and ZnCdS/GaP heterostructures

Averin S., Kuznetzov P., Zhitov V., Zakharov L., Alkeev N., Gladisheva N. Selectively-sensitive-metal-semiconductor-metal photodetectors based on AlGaN/AlN and ZnCdS/GaP heterostructures. Physica Status Solidi , 2013 , C10 (3). 298 -301. ISSN 1862-6300

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Аннотация

We report on the growth, fabrication and characterization of metal-semiconductor-metal (MSM) photodetectors based on AlGaN/AlN/Al2O3 and ZnCdS/ZnS/GaP heterostructures. The structures were grown by MOVPE at the temperatures 1050 ºC and 415 ºC respectively. Interdigital Au/Ni Schottky barriercontacts forming MSM-diode structures were deposited on the surfaces of AlGaN and ZnCdS. The finger width and gap were 3 μm and active diode area 100x100 μm2 thus suggesting short transittimes of photogenerated carriers, low capacitance of the diode structure and high-speed operation of the detectors. The spectral response of AlGaN MSM-diodes demonstrates the ability of detectors for true solar-blind response with maximum current responsivity ~0.1 A/W at 230 nm under illumination from substrate. The I-V curves displayed dark currents of ~50 pA at 40 V bias. The dark current of the ZnCdS diode is much lower (~2 pA at 40 V), which confirms the high crystalline quality of the ZnCdS-layer.

Тип объекта:	Статья
Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!:	Аверин С., Кузнецов П., Житов В., Захаров Л., Алкеев Н., Гладышева Н.
Подразделения (можно выбрать несколько, удерживая Ctrl):	257 лаб. быстропротекающих оптических явлений в твердотельных структурах
URI:	http://cplire.ru:8080/id/eprint/449

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