Trukhin A.N., Golant K.M., Teteris J. Luminescence of unfused 95%SiO2–5%GeO2 amorphous films with fluorine additive: No evidence for presence of GeODC(I) defects found. Journal of Non-Crystalline Solids , 2013 , 367. С. 53-57. ISSN 00223093
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Текст
Luminescence of unfused 95%SiO2–5%GeO2 amorphous films with fluorine additive.pdf Загрузить (844kB) | Предварительный просмотр |
Аннотация
Photoluminescence (PL) of unfused amorphous germanosilicate films with fluorine additive is studied in 2–8.5 eV spectral range. Experiments are based on films deposited on silica substrates by means of the surface-plasma chemical vapor deposition (SPCVD). Films of about 100 μm in thickness with “high F” (~4.2 wt.%) and “low F” (~0.5 wt.%) fluorine content have been fabricated for the experiments. KrF (248 nm), ArF (193 nm) and F2 (157 nm) excimer lasers are used to pump PL. It is found that absorption and luminescence associated with germaniumoxygen deficient centers (GeODCs) in “high F” and “lowF” films differ. In the “high F” unfused film absorption coefficient of the band at 5 eV as well as intensity of the blue PL band at 3.1 eV are significantly greater. This film proves features of the so called GeODCs(II), which symbolize twofold coordinated germaniumdefects in silica network. In the “lowF” unfused film absorption band at 5 eV is feebly marked. Poorly resolved PL intrinsic to GeODCs(II) can be detected in this film under the KrF laser pump. The most significant PL features are revealed under deeper UV pump by ArF and F2 lasers. Spectral positions of PL bands excited by these lasers correspond to GeODCs(II). However PL decay kinetics dramatically differs from that one intrinsic to GeODCs(II). Noticeable growth of PL intensity caused by permanent (half an hour and more) exposure to ArF and/or F2 lasers takes place, indicating GeODC(II) formation. It is found that considerable body of fluorine additive has the sameeffect as profusion for “lowF” and/or fluorine free germanosilicate amorphous material synthesized by SPCVD. In the “high F” film yield of GeODC(II) PL pumped by the F2 laser remains high. This speaks for the suppression of the competitive 7.6 eV absorption band associated with SiODCs(I) by fluorine additive indicating a decrease in the content of this type of defects in the material. High yield of GeODC(II) luminescence pumped by deep UV photons aswell as hypothetical similarity of SiODC(I) and GeODC(I) permit one to conclude that GeODCs(II) are the only defects dominating in the materials under study.
| Тип объекта: | Статья |
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| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | А.Н.Трухин, К.М.Голант, Й. Тетерис |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 195 лаб. волоконно-оптических технологий |
| URI: | http://cplire.ru:8080/id/eprint/342 |
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