Kuznetsov P.I., Yapaskurt V.O., Shchamkhalova B.S., Shcherbakov V.D., Yakushcheva G.G., Luzanov V.A., Jitov V.A. Growth of Bi2Te3 films and other phases of Bi-Te system by MOVPE. Journal of Crystal Growth , 2016 (455). С. 122-128.
Полный текст не доступен из этого репозитория.Аннотация
We have deposited films of Bi-Te system by atmospheric pressure MOVPE on (0001) Al2O3 substrates with thin ZnTe or thick GaN buffer layers at different temperatures and Te/Bi ratio in the vapor phase. As-grown films were studied by X-ray diffractometry, SEM microscopy and Raman spectroscopy.To determine the elemental composition of the films, an energy dispersive spectrometer was used. Single-phase films of Bi2Te3, Bi4Te5, BiTe, Bi10Te9, Bi4Te3, Bi3Te2 have been grown and growth parameter ranges for obtaining different phases were defined. It was found that under the same growth condition different phases of the Bi-Te system realize depending on the film's thickness. Thus, when growing of Bi2Te3 films by MOCVD method the careful control of the phase composition is required.
| Тип объекта: | Статья |
|---|---|
| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | Кузнецов Япаскурт Щамхалова Щербаков Якущева Лузанов Житов |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 215 лаб. проблем субмикронной технологии 216 лаб. технологических процессов твердотельной электроники 218 лаб. химических методов технологии и анализа |
| URI: | http://cplire.ru:8080/id/eprint/3340 |
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