Bushuev E.V., Yurov V.Y., Bolshakov A.P., Ralchenko V.G., Khomich A.A., Antonova I.A., Ashkinazi E.E., Shershulin V.A., Pashinin V.P., Konov V.I. Express in situ measurement of epitaxial CVD diamond film growth kinetics. Diamond & Related Materials , 2017 , 72. С. 61-70. ISSN 0925-9635
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Аннотация
We used a low-coherence interferometry for precise continuous in situ measurements of thickness and growth rate of epitaxial single crystal diamond layers in microwave plasma CVD in H2-CH4 gas mixtures in a broad range of substrate temperatures Ts (750–1150 °C) and CH4 concentrations (1–13%). Rich growth kinetics is collected in a single experiment by depositing about 60 layers on one (100) Ib HPHT diamond substrate in different regimes (the substrate temperature was controlled by the microwave power) at fixed pressure P = 130 Torr, without the plasma switch-off. The growth rate is found to follow Arrhenius dependence with activation energy Ea = 11.1 ± 1.0 kcal/mol. By appropriate choice of the substrate temperature the growth rate can be significantly enhanced. The growth rate as high as 82 μm/h is achieved by optimizing the temperature and gas composition. At low CH4 content (1%) growth competes with etching by atomic hydrogen, the etching dominating at high Ts (> 1000 °C in the present conditions). The etching rate in pure H2 plasma was measured and activation energy Ea = 9.8 ± 0.8 kcal/mol was deduced. Gas temperature Tg in the plasma core evaluated from optical emission spectra for dimer C2 (Swan band), was found to be either constant or slightly and monotonically increasing with absorbed power, whereas the absorbed microwave power density shows a decreasing, although slight, trend. This suggests the temperature depended surface reactions to play a major role in the diamond growth kinetics under variable microwave power. Raman mapping of cross-section of the produced multilayered sample confirmed high quality of diamond structure over all the deposition regimes explored.
| Тип объекта: | Статья |
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| Дополнительная информация: | DOI - 10.1016/j.diamond.2016.12.021 |
| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | Бушуев Е.В., Юров В.Ю., Большаков А.П., Ральченко В.Г., Хомич А.А., Антонова И.А., Ашкинази Е.Е., Шершулин В.А., Пашинин В.П., Конов В.И. |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 218 лаб. химических методов технологии и анализа |
| URI: | http://cplire.ru:8080/id/eprint/3022 |
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