Ralchenko V.G., Sedov V.S., Saraykin V., Bolshakov A.P., Zavedeev E., Ashkinazi E.E., Khomich A.A. Precise control of photoluminescence of silicon-vacancy color centers in homoepitaxial single-crystal diamond evaluation of efficiency of Si doping from gas phase. Applied Physics A , 2016 , 122. р. 795. ISSN 0947-8396
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Аннотация
Ability to precisely control the Si-related color center abundance in diamond is important for the use of silicon-vacancy (SiV) defects with bright photoluminescence (PL) in quantum information technologies and optical biomarkers. Here, we evaluated the efficiency of Si incorporation in (100) plane of homoepitaxial diamond layers upon in situ doping by adding silane SiH4 in the course of diamond chemical vapor deposition in microwave plasma using CH4–H2 mixtures. Both the Si concentration in the doped samples, as determined by secondary ion mass spectrometry, and PL intensity of SiV centers at 738 nm wavelength, measured at excitation wavelength of 473 nm, demonstrate a linear increase with silane content in feed gas in the range. The incorporation efficiency f, defined as the ratio of Si concentration in diamond to that in gas, f = [Si/C]dia/[Si/C]gas is found to be (1.1 ± 0.5) × 10−3 for the silane concentrations explored, [SiH4/CH4] < 0.7 %; thus, the Si atoms are accommodated in (100) diamond face easier than nitrogen and phosphorus, but more difficult than boron. This finding allows a tailoring of the Si content and photoluminescence intensity of SiV centers in in situ doped CVD diamond.
| Тип объекта: | Статья |
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| Дополнительная информация: | WoS - 000382642700011 Scopus - 84981499497 DOI - 10.1007/s00339-016-0343-x |
| Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: | Ральченко В.Г., Седов В.С., Сарайкин В., Большаков А.П., Заведеев Е., Ашкинази Е.Е., Хомич А.А. |
| Подразделения (можно выбрать несколько, удерживая Ctrl): | 218 лаб. химических методов технологии и анализа |
| URI: | http://cplire.ru:8080/id/eprint/3019 |
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