The influence of annealing on the NIR luminescence lifetime in Bi-doped silica optical fibers

Bazakutsa Alexey, Golant Konstantin The influence of annealing on the NIR luminescence lifetime in Bi-doped silica optical fibers. In: 11th International Symposium on SiO2, Advanced Dielectrics and Related Devices, 13 - 15 june 2016, Boscolo Hotel Plaza, Nice, France

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Аннотация

Annealing at a temperature of 873 K is shown to irreversibly influence the near-infrared (NIR) luminescence decay kinetics of bismuth doped silica optical fibers, pumped at the 808 nm wavelength. We found that annealing leads to quenching of the NIR luminescence peaking at a wavelength of 1420 nm. Our results support the cluster rather than the point defect origin of the bismuth luminescence in silica proposed and discussed in our previous research [1]. The results obtained let one conclude that the NIR luminescence lifetime of larger size bismuth clusters is greater as compared to smaller ones. The long time annealing quenches luminescence of smaller size clusters 2 – 3 times more effectively.

Тип объекта:	Доклад на конференции или семинаре (Постер)
Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!:	А.П.Базакуца, К.М.Голант
Подразделения (можно выбрать несколько, удерживая Ctrl):	195 лаб. волоконно-оптических технологий
URI:	http://cplire.ru:8080/id/eprint/279

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