Optical transitions in two-dimensional topological insulators with point defects

Sablikov Vladimir A., Sukhanov Aleksei A. Optical transitions in two-dimensional topological insulators with point defects. Physica B: Condensed Matter , 2016 , 503. С. 1-6. ISSN 09214526

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Physica B_Cond.Matt.503(2016)1–6[Sablikov,Sukhanov-Optical transitions in 2D topological insulators with point defects].pdf

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Официальный URL: http://doi.org/10.1016/j.physb.2016.09.008

Аннотация

Nontrivial properties of electronic states in topological insulators are inherent not only to the surface and boundary states, but to bound states localized at structure defects as well. We clarify how the unusual properties of the defect-induced bound states are manifested in optical absorption spectra in two-dimensional topological insulators. The calculations are carried out for defects with short-range potential. We find that the defects give rise to the appearance of specific features in the absorption spectrum, which are an inherent property of topological insulators. They have the form of two or three absorption peaks that are due to intracenter transitions between electron-like and hole-like bound states.

Тип объекта: Статья
Авторы на русском. ОБЯЗАТЕЛЬНО ДЛЯ АНГЛОЯЗЫЧНЫХ ПУБЛИКАЦИЙ!: Сабликов, Суханов
Подразделения (можно выбрать несколько, удерживая Ctrl): 199 лаб. теоретических проблем микроэлектроники
URI: http://cplire.ru:8080/id/eprint/2607
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