Yulii Vyacheslavovich Kislinskii

Born:	September 27th, 1963, in Ukraine (USSR)
Nationality:	Russian Federation
Marital status:	Single
Address:	Moscow 125009, Mokhovaya st. 11-7, Kotelnikov Institute of Radio Engineering and Electronics Russian Academy of Sciences
E-mail:
Tel/Fax:	(7495)-629-74-31/(7495)-629-36-78
ResearcherID:	A-9607-2014
ORCID:	0000-0003-4281-8604

Yulii V. Kislinskii

Education:

1985	M.Sc. degree from Moscow institute of Steel and Alloys
2012	PhD thesis “Electron transport in bicrystal junctions and hybrid hetero-structures from cuprate superconductors” in the Kotel`nikov Institute of Radio Engineering and Electronics Russian Academy of Sciences

Employment:

1985–1988	Engineer in Institute Volna, Moscow. Specialization - thick film technology
1988-1990	Senior engineer in Centre of physics and technology, Moscow. Specialization – measurement of complementary MOS devices
1991-1993	Postgraduate student in Institute of crystallography RAS, Moscow. Specialization physics of solid state
1993-2002	Junior researcher, later researcher, in the Institute of crystallography. Scientific interest: physics of bicrystal high – TC Josephson junctions
2002-present	Researcher in Kotelnikov Institute of Radio-Engineering and Electronics RAS, Moscow

Specialisation:

Microelectronics – Josephson devices, semiconductor devices.

Current research interests:

Current - phase relations in high – T_c Josephson junctions
Electron transport mechanisms in high - T_c Josephson junctions
Metal – insulator transitions in oxides with strong correlation of carriers
Proximity effect in superconductor – hopping conductor junctions
Submm wave detectors based on bicrystal Josephson junctions

Publications:

Co-author of more then 40 publications in refereed journals, h-index 7 by the RID.

During last 5 years author of 10 contributions to conferences.