List of some publications
1. Kholodnov V. A. Contribution to Hall-Schockley-Read theory of recombination //
Semiconductors, vol. 30, issue 6, pp. 538-544, 1996.
2. Kholodnov V. A. Avalanche multiplication coefficients of carriers in p-n structures //
Semiconductors, vol. 30, issue 6, pp.558-563, June 1996.
3. Kholodnov V. A. Giant burst of photoconductivity in semiconductors upon an in-crease
in the concentration of recombination centers // Letters to Journal of Experimental and
Theoretical Physics, vol. 67, issue 9, pp. 685-691, 1998.
4. Kurochkin N.E., Kholodnov V. A. Phenomenological model of the anomalous
behavior of the avalanche noise factor in metal-insulator-semiconductor structures // Technical
5. Kholodnov V. A., Drugova A.A. On the possibility of suppressing the saturation of
photoelectric amplification of weak optical emission in semiconductors by forming near-contact
8. Nikitin M., Drugova A., Kholodnov V., Chekanova G. Simulation of Small-pitch
High-density Photovoltaic Infrared Focal Plane Arrays. In book ″Advances in Photodiodes″,
edited by Gian-Franco Dalla Betta, part 1, chapter 5, p. 95-120, Austria-Croatia-India-USA,
9. Kholodnov V.A., Nikitin M.S. Physical design fundamentals of high performance
ava-lanche heterophotodiodes with separate absorption and multiplication regions// in book
″Photodiodes - From Fundamentals to Applications″, edited by Ilgu Yun, section 1
″Funda-mental Physics and Physical Design″, chapter 2, p. 27 - 101, InTech, Rijeka-
11. Kholodnov V.A. About particular effect of indirect-gap degree in semiconductor on
threshold energy of band-to-band impact generation of electron-hole pairs at two-particle
collisions// International conference Sensor engineering and electronic instrument advances,
21-22 November 2015, Dubai, UAE, Extended abstracts.
12 Kholodnov V.A., Nikitin M.S., Burlakov I. D. Analytical Principles of Physical Design
of Avalanche Heterophotodiodes Based on Direct-Band Semiconductors// International
conference Sensor engineering and electronic instrument advances, 21-22 November 2015,
Dubai, UAE, Extended abstracts.
13. Kholodnov V.A. and Nikitin M. S. The theory of giant splash of photoresponse in
semiconductors at low-level illumination with increasing concentration of deep recombination
impurity // in Optoelectronics - Materials and Deveces, Edited by S. L. Pyshkin and
14. Kholodnov V. A., Nikitin M. S., Burlakov I. D. Analytical method for calculating
performance of avalanche heterophotodiode with separate absorption and multiplication regions
based on “low-high-low” type heterostructure. The First International Conference on Advances
in Sensors, Actuators, Metering and Sensing ALLSENSORS 2016, April 24 - 28, 2016 - Venice,
Italy, Proceedings of the conference.
15. Kholodnov V. A., Burlakov I. D. and Drugova A.Analytical approuch to selection of
the optimum structure of avalanche heterophotodiodes based on direct gap semiconductors //
Journal of Communication Technology and Electronics, vol. 61, issue 3, pp. 338-343, 2016.
16. Kholodnov V. A. About giant splash of photoelectric response in semiconductors with
increasing concentration of recombination centers. Case of non-uniform illumination along
directon of electric field . The First International Conference on Advances in Sensors, Actuators,
Metering and Sensing ALLSENSORS 2016, April 24 - 28, 2016 - Venice, Italy, Proceedings of
the conference.